Abstract
Intense terahertz (THz) stimulated emission from boron-doped SiGe/Si quantum well structures with internal strain has been observed recently. We present a theoretical calculation which shows the formation of resonant states, and explains the origin of the observed temperature dependence of the dc conductivity under low bias voltage. Thus, the mechanism of THz lasing is population inversion of the resonant state with respect to the localized impurity states. This is the same mechanism of lasing as in uniaxially stressed p-Ge THz lasers.
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