Abstract
A comparative analysis of the structural features and electrical parameters of Sm0.85Gd0.15S single crystals in the semiconducting phase and the metallic phase stable at atmospheric pressure suggests that, in materials with the Sm1 − x Gd x S composition, the stabilization of the metallic phase formed under a high hydrostatic pressure occurs as a result of the increase in the volume fraction of defects in the material. The latter is reflected in a decrease in the size of coherent X-ray scattering regions. The persistence of the metallic SmS phase formed in the near-surface layer after the polishing of the sample surface allows a similar explanation.
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