Abstract
Simultaneous implantation and deposition of Si by KrF-excimer-laser (248 nm) irradiation in an ambient silane (SiH4) gas realize the surface modification of stainless steel (SUS) 304 at room temperature. This process is referred to as the Laser Implant-Deposition (LID). Depth profiles of Si concentration in the modified layers and the total quantities of supplied Si (Si dose) are analyzed by Rurtherford Backscattering Spectroscopy (RBS) measurements. The Si supply mechanism of LID is discussed with variations of the Si dose as a function of laser fluence, gas pressure, and the number of laser pulses. The calculation of temperature along the depth during the LID process suggests that the Si atoms diffuse into the SUS304 in a liquid phase. Fitting of the calculated depth profile to the experimental data, using the interdiffusion theory, gives an interdiffusion coefficient between Si and SUS304 as high as ≈ 2.8×10−6 cm2/s. A simplified model for simulation, by which well agreed depth profiles of Si can be simulated for various experimental conditions, is proposed.
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