Abstract
A titanium dioxide (TiO2) thin film is proposed as the active layer for the detection of oxygen gas. The sensor is fabricated on silicon wafer using sol-gel dip coating technique with a constant withdrawal speed. The field emission scanning electron microscope image reveals that the film has a uniform structure while the x-ray diffraction analysis indicates that the film is anatase phase with tetragonal lattice structure. The film exhibit the highest intensity peak at (101) plane. The surface roughness measurement shows that the film has low surface roughness with small grain size. The electrical studies revealed that the resistivity is about 4.02 x 10-3 Ω.cm and the thickness of TiO2 film is 127.44 nm. The gas sensor measurement showed that the sensor response of the film is about 4.21% at room temperature.
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