Mechanism of resistance distribution properties in oxide-based resistance switching nanodevice

Abstract

Although oxide-based resistive switching memory (OxRAM) is one of the strong next-generation high-capacity memory candidates, it has an unresolved problem that the higher the resistance levels, the larger the cycle-to-cycle resistance variabilities to be operated in multi-resistance level mode. In this paper, we develop a simple theory from the operating principles of OxRAMs that excellently matches with experiments both qualitatively and quantitatively. From the theory, we can finally understand the fundamental capabilities of multi-resistance level operation of OxRAMs, and how to improve the switching properties within that.