Abstract
The mechanism for the reflection high-energy electron-diffraction intensity oscillations during molecular-beam-epitaxy growth on the Si(001) surface is examined by using multiple-scattering theory, combined with the birth-death model. The monolayer and bilayer mode oscillations that occur along the [010] and the [11\ifmmode\bar\else\textasciimacron\fi{}0] directions can be reproduced well. It turns out that these oscillation modes are mainly caused by the interaction among the specular, two side bulk, and two surface reconstruction beams on the zeroth Laue zone, which have monolayer or bilayer mode periodicity.
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