Mechanism of photoconductivity in intrinsic epitaxial CVD diamond studied by photocurrent spectroscopy and photocurrent decay measurements

Abstract

We report experimental results on photocurrent spectra and the transient decay of photocurrent in intrinsic CVD diamond films grown homoepitaxially on natural, (100) oriented, single crystal type IIa diamond substrates. The detectors fabricated from these layers were developed in the frame of the LYRA project (the LYman-alpha RAdiometer onboard the European satellite PROBA-2) and will be used in space for UV solar monitoring. The typical photosensitivity is about 10 −2 A/W at 200 nm and 10 −6 A/W at 300 nm; the typical response time well below 0.1 ms. The enhance in photosensitivity, related to defects in CVD diamond layer and accompanied by long, non-exponential tails in photocurrent transients (persistent photocurrent), is observed in some detectors. The enhancement in photosensitivity also correlates with a long effective lifetime of photo-excited carriers. New defects at about 3.8 eV and another at about 4.3 eV are observed in the photocurrent spectrum of the sample with enhanced photosensitivity.