Abstract
The mechanism of phosphorous poisoning inhibiting Nb 3Sn formation at Nb/CuSn interfaces was elucidated with the aid of Auger depth profiling. Two different ternary NbPSn compound layers were observed to coexist with Nb 3Sn at the Nb/CuSn interface. This indicates that a modification of the diffusion reaction path is responsible for inhibited Nb 3Sn formation at the Nb/CuSn interface. The effect of phosphorous doping results in a straggling of the diffusion reaction path, which should be viewed as representing one fundamental category of poisoning mechanism in solid state interfacial reactions.
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