Abstract
We investigate theoretically the oxidation stability of the Si(001) (2 × 1) reconstructed surface passivated by Sr. Using density functional theory, we find that the Sr surface with ½ monolayer of Sr is protected against oxidation. The presence of Sr delays the oxidation of the surface dimer, and even when the dimer is oxidized, O does not react with the back-bond, preventing the unwanted vertical growth of SiO2. We also show that ¼ monolayer of Sr protects the Si surface in a different way. In the presence of ¼ monolayer of Sr, O atoms are attracted to the Sr-Si dimer complexes, thus preventing the formation of SiO2.
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