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Abstract
The mechanism of Ni removal from -covered Si specimens by HCN aqueous solutions has been investigated by means of total reflection X-ray fluorescence spectroscopy and X-ray photoelectron spectroscopy measurements. Ni contaminants on the surface are present in the form of SiO-NiOH. The removal mechanism consists of two steps, i.e., an initial fast process followed by a slow process. The rate-determining steps of both the processes are of the first order with respect to the concentration of cyanide ions . The fast and slow processes are tentatively attributed to the removal of SiO-NiOH on terraces and in sub-nanometer pores, respectively. The cleaning ability of the HCN aqueous solutions is much better than ammonia aqueous solutions, because of high reactivity to form nickel-cyanide complex ions and avoidance of readsorption of complex ions in the solutions.
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