Mechanism of nanosecond laser drilling process of 4H-SiC for through substrate vias

Abstract

Role of optical parameters on nanosecond laser drilling of 4H-SiC was experimentally studied. Using ns pulsed Nd:YAG laser, parametric studies on effects of wavelength (1064 nm or 532 nm), beam profile (Gaussian or Bessel), and ambient condition (air or water) were conducted. The wavelengths which have large optical penetration depth were selected as wavefront has to propagate through materials to generate Bessel beam. The experimental results showed that carbonization of SiC surface accelerates thermal ablation of the materials with fluence under the lattice melting threshold. Especially, pattern of side lobes with small fluence was formed by irradiation of Bessel beam. The pattern disturbed penetration of wavefronts through materials. Implementation of water environment was not effective to suppress carbonization and had slight effect on improvement of drilling quality. For this reason, deep drilling with small entrance was not achieved using Bessel beam. Irradiation of 1064 nm Gaussian beam with large fluence led to formation of critical amount of re-solidified silicon due to the large optical penetration depth. Carbonization and silicon formation had a significant effect on unique fluence dependence of drilling depth. Absorption mechanism was studied as well to discuss effect of wavelength on processing characteristics.