Abstract
The magnetization of a Be-doped low-temperature-grown GaAs layer exhibits large fluctuations at low temperatures, while it slowly relaxes towards a stable value. These changes in the magnetization result from transitions of antisite As defects between substitutional and interstitial sites. We have analyzed magnetization fluctuations by repeating measurements under identical conditions on both small and large numbers of pieces of samples. The analysis shows that observed large fluctuations are made of a number of coherent fluctuations, each of which corresponds to collective transitions of defects in one region of a sample. A number of coherent fluctuations increases with the temperature by following a relation of the canonical distribution, while the relaxation time increases with the temperature. An implication of the results is discussed by focusing on the long-range elastic interactions of defects and its effect on the mixing process of a phase-space trajectory of the system. We suggest that the mixing...
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