Abstract
The influence of gamma-ray irradiation on the electrical properties of thin polycrystalline films of samarium monosulfide with various crystal-lattice parameters was studied. The stability of the resistivity of films under an exposure dose in the range of D=108–109 R is explained on the basis of the existence of a channel for the relaxation of radiation-induced excitations; this channel is related to the presence of different-valence samarium ions (Sm2+ and Sm3+).
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