Abstract
Results of an STM study of dissociative GeH 4 adsorption on Si(1 1 1)-(7 × 7) at 300 K show that GeH 4 adsorbs under scission of two Ge–H bonds according to GeH 4(g) + 4db → GeH 2(ad) + 2H(ad). GeH 2 binds to two adatom dangling bonds in a bridged configuration, while the two released hydrogen atoms saturate two additional dangling bonds. The GeH 4 sticking coefficient under these conditions is 1.2 × 10 −6, one order of magnitude smaller than for SiH 4.
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