Abstract
Pulsed-power applications supporting research in fusion, plasma, and particle physics require delivery of high voltages over very short times (nanoseconds, or less)---no mean feat of engineering. The authors study current interruption in a step-recovery diode (SRD), which could be a fast-opening switch for high-voltage pulsed electronics, and find the main governing parameters to be the diode's reverse current density and base doping concentration. This understanding allows the design of improved structures, taking advantage of modern semiconductor growth technology.
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