Abstract
We have studied electroluminescence (EL) in the amorphous silicon-based erbium-doped structures in the temperature range 77–300K. The EL intensity at the wavelength of 1.54μm corresponding to a radiative transition in the internal 4f-shell of the Er3+ ion is low at 77K but sharply increases starting from 220K and exhibits a maximum near the room temperature. Measurements of the resistance of the electroluminescent structure as a function of temperature performed in parallel with the measurements of the EL intensity demonstrated a correlation in behavior of these two quantities: a pronounced decrease of the resistance occurs at the same temperature where the EL intensity starts to rise. Our results can be explained by the excitation of erbium ions via an Auger process which involves the capture of conduction electrons by neutral dangling bonds (D0) defects located close to erbium ions and thermally activated tunnel emission of electrons from deep donors to the conduction band that keeps the stationary current through the structure. A theoretical model proposed explains consistently all of our experimental data.
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