Abstract
The resistivity temperature dependence of diamondlike films containing no hydrogen has been investigated for the first time. It is discussed in terms of variable range hopping between localized states at temperature T below 400 K. The exponent of the Mott's law changes from 1/4 to 1/2 with the decreasing thickness of films, due to a stronger contribution of states localized on impurities in the vicinity of interfaces. At higher temperatures, the transport proceeds from the direct excitation of localized electrons up to the mobility edge. But in any case a metallic conduction through percolating sp2 sites has been observed.
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