Mechanism of “Controlled Atomic Defects”: Extension to the Ternary Systems

Abstract

The method of “controlled atomic defects” realized by changing the alloy composition along definite sections in the Gibbs triangle is applied to ternary phases of two types: ternary compounds and solid solutions based on binary compounds. The overview of extensive experimental material, which we obtained when studying I–III–VI2 ternary phases and IV–X–VI phases based on IV–VI binary compounds is given. The controlled introduction of non-stoichiometric and impurity defects of different types into I–III–VI2 and IV–VI compounds was realized using the “controlled atomic defects” method. It was shown that there is a distinct correlation between the composition, type and concentration of impurity and non-stoichiometric defects, on the one side, and the crystal structure and physical properties, on the other side. The results obtained prove the fruitfulness of using the “controlled atomic defects” method for the development of physical foundations of controlling properties of complex semiconductor phases.