Abstract
A bright photoluminescence around 1.7 eV is observed for post-annealed samples of 1 MeVSi2+ implantedin an SiO2 matrix. A super-linear power dependence of photoluminescence intensity accompanied by pulseshortening under continuous wave laser excitation is recorded without any spectral narrowing.An emission process comprised of an initial non-radiative recombination (time constant∼280–315 ps) of excited carriers in the defect states inSiO2 matrices to the conduction band minima of nc-Si, followed by a slowerprocess of radiative recombination in the direct band transition fornc-Si along with a non-radiative Auger recombination (time constant∼2.67 ns) is proposed.
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