Abstract
The nucleation of diamond deposited on Si is enhanced by a negative substrate bias. It is proposed that incident CHx+ ions with 70–80 eV energy stabilise a graphitic C overlayer, with some layers oriented normal to the surface. Diamond nucleates on the layer edges. The graphitic amorphous carbon acts as a buffer layer to accommodate the 2:3 lattice mismatch between diamond and Si, without requiring an excessive density of dislocations or dangling bonds.
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