Abstract
ABSTRACTReactions between Au and GaAs occurs during alloying of Au-based ohmic contacts on GaAs. The reaction and electrical properties of annealed Au/GaAs contacts have both been studied. The extent of the Au-GaAs reactions increased with annealing temperature, incorporated Ga and As into the Au film and left pits on the GaAs surface. The activation energy for these reactions was determined to be 17.6 kcal/mole. Analysis of size evolution of reaction pits on GaAs proved that GaAs regrows at long time annealing. A mixed GaAs dissolution-regrowth mechanism is proposed for annealing temperature and time similar to those used to form alloyed ohmic contacts. Increased surface carrier concentrations resulting from accumulation of dopants near the Au/GaAs interface is proposed to enhance ohmic contact formation.
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