Abstract
In order to improve asymmetric etched profiles at the wafer edge region, the atomic oxygen density distributions and the degree of the asymmetric etched profiles in the trimming process were evaluated with a plasma process system employing vacuum ultraviolet absorption spectroscopy. The non-uniform atomic oxygen distribution was found to create the asymmetric etched profile having a larger trimming amount at the higher atomic oxygen density side compared to that at the opposite side. There is a strong relationship between the degree of asymmetric etched profiles and the gradient of atomic oxygen density distributions. Furthermore, formulation of the degree of the asymmetric etched profiles revealed that a shorter mean free path under higher gas pressure conditions could improve the asymmetric etched profiles. It was experimentally confirmed that the degree of the asymmetric etched profiles was improved by around 70% when the gas pressure was increased from 2.7 to 10.8 Pa.
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