Abstract
The mechanism of As incorporation in CdTe layers grown by atmospheric-pressure metalorganic vapor phase epitaxy (MOVPE) is reported. Triethylarsine (TEAs) was used as a dopant source. The As incorporation decreased with the DETe flow rate under a fixed DMCd flow condition. On the other hand, the As incorporation increased as the growth temperature was decreased form 425 to 375°C. The As incorporation efficiency for TEAs was estimated to be about 0.1%, which is nearly equal to that for AsH 3. Since the pyrolytic temperature for TEAs is much lower than for AsH 3, these results indicate that the As incorporation is not dominated by the pyrolitic efficiency of the dopant source, but by the sticking rate of As species onto Cd species.
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