Abstract
Two-dimensional (2D) materials may play an important role in future photodetectors due to their natural atom-thin body thickness, unique quantum confinement, and excellent electronic and photoelectric properties. Semimetallic graphene, semiconductor black phosphorus, and transition metal dichalcogenides possess flexible and adjustable bandgaps, which correspond to a wide interaction spectrum ranging from ultraviolet to terahertz. Nevertheless, their absorbance is relatively low, and it is difficult for a single material to cover a wide spectrum. Therefore, the combination of phototransistors based on 2D hybrid structures with other material platforms, such as quantum dots, organic materials, or plasma nanostructures, exhibit ultra-sensitive and broadband optical detection capabilities that cannot be ascribed to the individual constituents of the assembly. This article provides a comprehensive and systematic review of the recent research progress of 2D material photodetectors. First, the fundamental detection mechanism and key metrics of the 2D material photodetectors are introduced. Then, the latest developments in 2D material photodetectors are reviewed based on the strategies of photocurrent enhancement. Finally, a design and implementation principle for high-performance 2D material photodetectors is provided, together with the current challenges and future outlooks.
Highlights
Accepted: 8 October 2021Photodetectors are one of the key components in modern multifunctional technologies that can convert light signals into electrical signals [1,2]
We present the latest advances in the latest photodetectors based on
Many 2D photodetectors exhibit high optical responsivity, much of this is attributed to extended carrier lifetimes at the expense of response speed
Summary
Photodetectors are one of the key components in modern multifunctional technologies that can convert light signals into electrical signals [1,2]. The response speed of the TMD photodetectors is relatively slow because of the low mobilities and the trapping effect for photo charge carriers [35]. Low-dark current and high-responsivity photodetectors are needed for technological development [36,37,38]. If these challenges can be solved, the 2D material photodetectors are expected to achieve many unparalleled achievements, including ultra-high responsivity (1010 A/W) [39], ultra-fast light response (0.4 ps) [40], an ultra-wide detection band (10.6 μm) [41], and ultra-sensitive photodetection (1016 Jones) [42]. We summarize photocurrent enhancement methods for 2D material photodetectors and present the recent advances in
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