Abstract
This work mainly focuses on the NBTI (Negative Bias Temperature Instability) mechanism and investigates the degree of degradation caused by NBTI stress for different gate dielectrics, including thermally-grown and heavily-nitrided oxide films. The capability of our model has been demonstrated by excellent agreement between the fitted curves and experiments for ultrathin gate dielectrics (1.7 nm - 3.3 nm) fabricated by different processes. Among the various gate dielectrics under consideration, RPN (remote plasma nitrided oxide) is most resistant to NBTI stress.
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