Abstract
As a third-generation semiconductor material, silicon carbide has excellent electron mobility and band gap, which makes it shine in power and optoelectronics applications. 4H-SiC has the highest band gap of all crystal type of SiC; chemical mechanical polishing technology is the only effective global planarization process today. In this paper, we studied the polishing rate of 4H-SiC silicon surface and carbon surface based on the chemical mechanical polishing processing. The structure of the resulting material layer was studied by TEM, and the difference between the chemical mechanical polishing of the carbon surface and the silicon surface was explained.
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