Mechanism analysis of a flexible organic memristive memory with capacitance effect and negative differential resistance state

Shouhui Zhu,Shuangsuo Mao,Hongyan Wang,Guoqiang Fu,Xiaoli Zhu,Bai Sun,Guangdong Zhou,Hongbin Zhao,Shubham Ranjan,Yong Zhao

doi:10.1063/1.5100019

Abstract

It has been gradually realized that the sustainable electronic devices are of great prospects for sustainable applications in electronic technology products. From another point of view, a device with multiple physical performances would be a potential candidate for next generation multifunctional electronics. In this report, a flexible memory device based on sweet potato skin (SPS) was demonstrated, which presented a stable memory performance over 500 cycles and a large switching resistance ratio, and the current-voltage (I-V) hysteretic loop accompanied by capacitance effect and negative differential resistance state. In order to carry out detailed mechanism analysis, two materials (ITO or Ti) with different work functions as the bottom electrode and Ag as the top electrode were used to prepare two memristive devices. It can be confirmed that the conductive behavior obeys Schottky emission and direct tunneling at low voltage region, while it follows the hopping conduction at high voltage region. In a word, the selected SPS, a sustainable waste material, can be employed to prepare bioelectronic devices, which has a potential application value in green electronic products.

Highlights

Since the resistive random access memory (RRAM) has potential applications in the electronics industry, a lot of research works are currently devoted to commercializing usable electronic components, mainly focusing on exploring different dielectric layer materials.9–11 Dielectric layer materials have been evolved from traditional materials to organic/inorganic materials such as insulators, semiconductors, metal oxides, polymers, and biomaterials.9–13 The traditional material preparation requires advanced processes, such as magnetron sputtering, chemical vapor deposition, atomic layer deposition, and pulsed laser deposition.14–16 On the one hand, these materials are relatively expensive and the preparation process is complicated
A flexible memory device based on sweet potato skin (SPS) was demonstrated, which presented a stable memory performance over 500 cycles and a large switching resistance ratio, and the current-voltage (I-V) hysteretic loop accompanied by capacitance effect and negative differential resistance state
These biocompatible materials can be applied to the manufacture of bioelectronic devices that naturally degrade under specific conditions, providing a prerequisite for application of organisms

Summary

Introduction

Since the resistive random access memory (RRAM) has potential applications in the electronics industry, a lot of research works are currently devoted to commercializing usable electronic components, mainly focusing on exploring different dielectric layer materials.9–11 Dielectric layer materials have been evolved from traditional materials to organic/inorganic materials such as insulators, semiconductors, metal oxides, polymers, and biomaterials.9–13 The traditional material preparation requires advanced processes, such as magnetron sputtering, chemical vapor deposition, atomic layer deposition, and pulsed laser deposition.14–16 On the one hand, these materials are relatively expensive and the preparation process is complicated. The memory behavior accompanied NDR effect can be observed under relatively large reverse bias voltages (approximately −1.8 V), as shown, in which the I-V curves show significant differences when different cyclic sweep voltages are applied.

Results

Conclusion