Mechanical strains modulate the carrier behaviors of organic field effect transistors

Abstract

We theoretically analyze carrier transports in an organic field effect transistor that is subjected to mechanical strains. These strains change the density of carriers that are accumulated at the channel by the Maxwell-Wagner mechanism and thus modulate drain currents. These effects of strains are characterized by three parameters α, μ1, and μ2, which represent the changes of the dielectric constant of gate insulators and channel mobilities. These charge density modulations are different from piezoelectric effects, and accumulated charge density depends on both applied gate voltages and applied strains.