Abstract
Due to their low thermal process budget, polycrystalline silicon (poly-Si) films formed by Al-2%Si induced crystallization (AIC) are potentially attractive for monolithic integration of MEMS with CMOS electronics using a "MEMS-last" process flow. In this work, the mechanical properties of AIC poly-Si films formed with a maximum substrate temperature of 350C are investigated. Residual stress, Young's modulus, and strain gradient are extracted from pull-in voltage measurements of cantilever and clamped-clamped beams. A post-AIC pulsed excimer laser annealing (ELA) treatment is found to be beneficial for completing the Al-2%Si and Si layer exchange process, although it results in a larger strain gradient within the poly-Si layer. The mechanical properties of AIC poly-Si films compare favorably with those of low-thermal-budget poly-Si0.4Ge0.6 films, so that AIC poly-Si is a promising structural material for MEMS.
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