Abstract
Package structures are continually becoming more complicated to achieve high-performance devices. Thus, the 2D structure of package needs to be modified to a 2.5D or 3D structure. Therefore, standoff properties at the solder joint are required to prevent Si chip damage and electrical shorts when the solder joint is located between the substrate and interposer. Cu-core solder balls (CCSB) are the most popular interconnection choice for a 2.5D package because they have better standoff properties than the general SAC solder. The mechanical properties of CCSBs were evaluated by ball shear tests and measuring bump height as compared with Sn–3.0 wt.%Ag–0.5 wt.% Cu solder. The bump heights of CCSBs and Sn–3.0 wt.%Ag–0.5 wt.% Cu were measured under several compressive pressure conditions at room temperature, 175 °C and 235 °C. The stand-off height of the CCSBs dramatically better than that of Sn–3.0 wt.%Ag–0.5 wt.% Cu solder under high pressure and temperature. The shear strength of the CCSBs was stronger than that of SAC solder at all multiple reflows due to the finer microstructure and higher stacking of dislocations at the interface of the Cu core ball surface.
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