Abstract
AbstractThe microstructure and mechanical properties of hot (h) and cold (c) sputtered Al-lwt%Si and Al-lwt%Si-0.5wt%Cu films were studied using transmission electron microscopy and wafer curvature stress measurements.Stress/temperature curves of all films showed only slight differences in compression on healing once a stable grain size was established. However, on cooling several remarkable differences were observed. These observations cannot be explained by assuming dislocation glide/climb as the dominant relaxation mechanism. The results will be discussed in terms of grain boundary diffusional relaxation (Coble creep), which occurs in addition to dislocation glide.
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