Abstract
The crack onset strain (COS) of 4-level thin film transistor (TFT) devices on both steel foils and thin polyimide (PI) films was investigated using tensile experiments carried out in situ in an optical microscope. Cracks initiated first within the SiO 2 insulator layer for both types of substrates. The COS was found to be equal to 1.15% and 0.24% for steel and PI, respectively. The influence of loading direction on failure of the TFT stack with anisotropic geometry was moreover found to be considerable, leading to recommendations for backplane design. The large difference in critical strain of the SiO 2 layer on the two substrates was analyzed using an energy release rate approach, and found to result from differences in layer/substrate mechanical contrast and in internal stress state. Based on this analysis a correlation between layer/substrate elastic contrast and tensile failure behavior was devised.
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