Mechanical effect of colloidal silica in copper chemical mechanical planarization

Abstract

The mechanical effect of colloidal silica concentration in copper chemical mechanical planarization (CMP) is considered in this paper by using friction force monitoring system. The copper peak was detected in the result of the energy-dispersive X-ray (EDX) spectra of the polishing residues. The addition of colloidal silica into copper CMP slurry increased both the material removal rate and the friction force. During CMP, as the concentration of the colloidal silica was increased, the temperature generated by the friction force also increased. To understand effect of abrasive concentration on the material removal and friction force, we considered the material removal and the friction energy for a single abrasive. The surface of the polished copper film was measured by X-ray photoelectron spectroscopy (XPS). All the material removal rates as a function of friction energy after polishing with various concentrations of colloidal silica had a non-linear characteristic.