Abstract
Aluminum Nitride (AlN) has been long time being regarded as highly interesting material for developing sensing applications (including biosensors and implantable sensors). AlN, due to its appealing electronic properties, is envisaged lately to serve as a multi-functional biosensing platform. Although generally exploited for its intrinsic piezoelectricity, its surface morphology and mechanical performance (elastic modulus, hardness, wear, scratch and tensile resistance to delamination, adherence to the substrate), corrosion resistance and cytocompatibility are also essential features for high performance sustainable biosensor devices. However, information about AlN suitability for such applications is rather scarce or at best scattered and incomplete. Here, we aim to deliver a comprehensive evaluation of the morpho-structural, compositional, mechanical, electrochemical and biological properties of reactive radio-frequency magnetron sputtered AlN nanostructured thin films with various degrees of c-axis texturing, deposited at a low temperature (~50 °C) on Si (100) substrates. The inter-conditionality elicited between the base pressure level attained in the reactor chamber and crystalline quality of AlN films is highlighted. The potential suitability of nanostructured AlN (in form of thin films) for the realization of various type of sensors (with emphasis on bio-sensors) is thoroughly probed, thus unveiling its advantages and limitations, as well as suggesting paths to safely exploit the remarkable prospects of this type of materials.
Highlights
IntroductionAluminum Nitride (AlN) became a hot topic material for many sensing applications
In the last years, Aluminum Nitride (AlN) became a hot topic material for many sensing applications
Thereby, the main objective of this work was to conduct a comprehensive evaluation of the physical-chemical and functional performance of reactive radio-frequency magnetron sputtered (RF-MS) AlN films synthesized at room-temperature, having dissimilar structural quality starting from different base pressure levels, in view of probing their potential suitability for the realization of various type of electronic devices
Summary
Aluminum Nitride (AlN) became a hot topic material for many sensing applications. This is due to its good piezoelectric properties, large bandgap (6.2 eV), high temperature stability (up to 1000 ◦C), chemical inertness, compatibility with the process technology, that makes. Piezoelectric AlN thin films were successfully integrated in pressure sensors capable to operate in high temperature or in harsh environments conditions (e.g., combustion pressure sensors for cars) [8] or for measuring pressure fluctuations in rotating machinery such as compressors and turbines [9]. AlN-based pressure, temperature and 3-axis acceleration sensors integrated on a single chip were recently attempted [23]
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