Abstract

With semiconductor technologies continuously pushing the miniaturization limits, there is a growing interest in developing novel low dielectric constant materials to replace the traditional dense SiO 2 insulators. In order to survive the multi-level integration process and provide reliable material and structure for the desired integrated circuits (IC) functions, the new low- k materials have to be mechanically strong and stable. Therefore the material selection and mechanical characterization are vital for the successful development of next generation low- k dielectrics. A new class of low- k materials, nanoporous pure-silica zeolite, is prepared in thin films using IC compatible spin coating process and characterized using depth sensing nanoindentation technique. The elastic modulus of the zeolite thin films is found to be significantly higher than that of other low- k materials with similar porosity and dielectric constants. Correlations between the mechanical, microstructural and electrical properties of the thin films are discussed in detail.

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