Abstract
Ga-doped ZnO films were deposited on polyethylene terephthalate (PET) substrate by dc magnetron sputtering using a high density GZO target (doped with 6.65 wt% Ga2O3) without substrate heating. We investigated electrical, structural, and mechanical properties of GZO films deposited under various total gas pressures (Ptot). GZO films deposited at Ptot of 2.0 Pa showed the lowest resistivity (2.91 x 10-2 7cm), which could be attributed to higher crystallinity of the film. Also, this GZO film showed the lowest change in resistance (8 R/R0 = 0.3) for the dynamic bending test.
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