Abstract
The possibility of increasing the resolution and accuracy of the photomask fabrication process is discussed when using a laser pattern generator. The proximity effect is first taken into account in this technique. The redistribution of laser beam energy in photoresist, which results in pattern distortions, can be characterized and used for the distortion compensation. The method for measuring absorbed energy density in photoresist is proposed, and experimental results are obtained for conditions used for a standard-type of photomask manufacturing process.
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