Abstract
We report the first measurements of photo-carrier lifetimes in silicon nanocrystal-based third generation solar cells by Kelvin force microscopy and x-ray photoelectron spectroscopy under modulated frequency light illumination. A high concentration of active defects at the interface between the nanocrystals and silicon oxide matrix may be passivated by annealing under hydrogen. We found that the carrier lifetime, τ, is τ = 7 × 10−5 s and τ = 3.5 × 10−5 s within 10% accuracy for the hydrogen passivated and non-passivated nanocrystals, respectively. We used an exponential model to confirm the experimental potential measurements and to estimate photo-carrier lifetimes.
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