Abstract
Rises in the junction temperatures of heterojunction bipolar transistors (HBTs) due to self-heating effects during transistor operation are measured using the electroluminescence of the band-to-band recombination. This method is useful for the direct junction temperature monitoring of small geometry devices. Junction temperatures measured in AlGaAs/GaAs HBTs with five 2×20 μm2 emitter fingers are raised 115 °C when the product of the collector current and the emitter-collector voltage is 0.25 W. The thermal resistance is determined to be 260 °C/W at 300 K.
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