Abstract
Abstract For accurate and reliable measurement of the internal quantum efficiency (IQE) of light-emitting diodes (LEDs), the method should be theoretically solid and experimentally simple to use without any prior assumption of physical parameters or complicated equipment. In this paper, we critically review the conventional characterization techniques for measuring the IQE of LEDs, including the methods based on temperature-dependent electroluminescence and constant AB(C) models. After reviewing the limitations of the existing IQE measurement techniques, we present the recently proposed method based on the improved AB model, called room-temperature reference-point method (RTRM). The RTRM is then applied to various LED devices to show how the IQE measurement techniques can be utilized to analyze their optoelectronic performances quantitatively.
Highlights
Nowadays, light-emitting diodes (LEDs) are found in numerous applications for their many advantages such as low power consumption, small size, long lifetime, and fast switching
We critically review the conventional characterization techniques for measuring the internal quantum efficiency (IQE) of LEDs, including the methods based on temperature-dependent electroluminescence and constant AB(C) models
After reviewing the limitations of the existing IQE measurement techniques, we present the recently proposed method based on the improved AB model, called room-temperature reference-point method (RTRM)
Summary
Light-emitting diodes (LEDs) are found in numerous applications for their many advantages such as low power consumption, small size, long lifetime,. The PE is rather simple to measure and serves as a useful parameter representing how efficient the device is in converting the electrical power to the desired radiant power; one needs to know more details than the PE to infer limiting factors in device performance. The IQE is in turn separated into the injection efficiency (IE), ηIE, and the radiative efficiency (RE), ηRE In formula, they are expressed as follows: ηPE = ηVE ⋅ ηEQE = ηVE ⋅ ηLEE ⋅ ηIQE (1) = ηVE ⋅ ηLEE ⋅ ηIE ⋅ ηRE. These efficiencies represent respective conversion processes in the LED [1,2,3]. Measuring the IQE accurately and reliably is extremely useful to elucidate the operating mechanisms of an LED device and to improve the device performance
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