Abstract
ABSTRACTIn the present paper, strain measurements based on second harmonic generation (SHG) and electron backscatter diffraction (EBSD) is demonstrated via two illustrative applications. While SHG gains access to strains in buried interfaces, EBSD can be used to measure strains in crystalline thin films with high spatial resolution on the order of tens of nanometers and high surface sensitivity. In addition, target preparation using low-voltage ion beam milling is demonstrated, gaining access to unstrained sample positions in strained silicon on insulator (sSOI) systems which are necessary for common “pattern-shift” methodologies.
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