Abstract
The evanescent light photon extraction efficiency of insulator, semiconductor and conductor amorphous nanolayers deposited on glass waveguides was evaluated from Differential Evanescent Light Intensity measurements. The Differential Evanescent Light Intensity technique uses the evanescent field scattered by the deposited nanolayer, enabling nanometer thickness profiling due to the high inherent dark background contrast. The results show that the effective evanescent photon penetration depth increases from metal to semiconductor and then to insulating layers, establishing thus the effective photon-material interaction length for the various materials classes.
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