Abstract
Two types of probe measurement are described which allow the determination of the conductivity mobility and the density of majority carriers in the neighborhood of p‐n junctions. The first of these measures the change in sheet conductivity of a layer as a function of the reverse bias applied to a junction bounding the layer. The second measures the capacitance of the junction vs. the reverse bias. The techniques are applied to silicon p‐n junctions of both the epitaxial and diffused variety. A significant difference is observed in the mobility variation near these two types of junction.
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