Abstract
Quantifying energetic disorder in organic semiconductors continues to attract attention because of its significant impact on the transport physics of these technologically important materials. Here, we show that the energetic disorder of organic semiconductors can be determined from the relationship between the internal quantum efficiency of charge generation and the frequency of the incident light. Our results for a number of materials suggest that energetic disorder in organic semiconductors could be greater than previously reported, and we advance ideas as to why this may be the case.
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