Abstract
The Stark-broadened profiles of singly ionized silicon lines of multiplet $1(3s3{p}^{2}^{2}D\ensuremath{-}3{s}^{2}4p^{2}P^{o})$ and multiplet $m(3{s}^{2}4s^{2}S\ensuremath{-}3{s}^{2}4p^{2}P^{o})$ have been measured by three methods, namely, photoelectrical scanning, fast scanning with a Fabry-Perot spectrometer, and using an optical multichannel analyzer. An electromagnetically driven shock tube was used to generate a high-density helium plasma containing small silicon and hydrogen admixtures and having an electron density ${N}_{e}\ensuremath{\approx}1\ifmmode\times\else\texttimes\fi{}{10}^{17}$ ${\mathrm{cm}}^{\ensuremath{-}3}$ and temperature $\mathrm{kT}\ensuremath{\approx}1.5$ eV. The measured half widths of the lines in the two multiplets are in \ensuremath{\sim}10% agreement with the widths estimated from a semiclassical calculation, while semiempirical and quantum-mechanical calculations give widths by as much as a factor of 2 below the measured widths.
Published Version
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