Abstract
This paper presents a method of the measurement of the optical absorption coefficient of the Ar8+ ions implanted layers in the p-type silicon substrate. The absorption coefficient is calculated using a value of the attenuation of amplitudes of a photothermal radiometry (PTR) and/or a modulation free carrier absorption (MFCA) signals and the implanted layer thickness calculated by means of the TRIM program. The proposed method can be used to indicate the amorphization of the ions implanted layers.
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