Abstract
The critical layer thickness (CLT) for InxGaixAs/GaAs has been studied by photoluminescence transmission electron microscopy and reflection high energy electron diffraction with the composition x and growth temperatures as parameters. The obtained values of CLT have been compared with theoretical models. None of them coincide with the experimental results. For x 0. 3 the CLT varies rapidly with x while the dependence is slow for x 3. Here the CLT is small typically a few monolayers. The CLT is governed by dislocation generation for x 0. 3 and by the onset of three dimensional growth for x 3.
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