Year-end Sale % OFF 
Abstract
The hole multiplication factor in pnp InAlAs/InGaAs single heterojunction bipolar transistors (HBTs) has been measured as a function of the base-collector bias. The hole impact ionization coefficient /spl beta//sub p/ has been estimated taking into account the Early effect, I/sub CBO/, and thermal effects. Numerical corrections for dead space were made. The importance of considering second order effects is highlighted, showing that rough approximations can lead to an overestimation of the coefficient /spl beta//sub p/. At low electric fields, the extracted coefficient agrees with the most recent photomultiplication measurements available in the literature. At high electric fields, hole impact ionization coefficient is estimated up to values previously not reported in the literature (/spl beta//sub p//spl ap/10/sup 4/ cm/sup -1/).
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
