Abstract
The temperature dependences of output power, oscillation frequency, and current-voltage curve are measured for resonant-tunneling-diode terahertz (THz) oscillators. The output power largely changes with temperature owing to the change in Ohmic loss. In contrast to the output power, the oscillation frequency and current-voltage curve are almost insensitive to temperature. The measured temperature dependence of output power is compared with the theoretical calculation including the negative differential conductance (NDC) as a fitting parameter assumed to be independent of temperature. Very good agreement was obtained between the measurement and calculation, and the NDC in the THz frequency region is estimated. The results show that the absolute values of NDC in the THz region significantly decrease relative to that at DC, and increases with increasing frequency in the measured frequency range.
Highlights
The terahertz (THz) frequency region has received considerable attention because various applications are expected, such as spectroscopy, imaging, and high-speed wireless communications.[1,2,3] Compact and coherent solid-state sources are important components for these applications
The temperature dependences of output power, oscillation frequency, and current-voltage curve were measured for resonant tunneling diodes (RTDs) THz oscillators
The measured temperature dependence of output power is compared with the theoretical calculation including the negative differential conductance (NDC) as a fitting parameter assumed to be independent of temperature
Summary
The terahertz (THz) frequency region has received considerable attention because various applications are expected, such as spectroscopy, imaging, and high-speed wireless communications.[1,2,3] Compact and coherent solid-state sources are important components for these applications. THz quantum cascade lasers are being studied from the optical device side.[4,5,6,7] Operating frequency of oscillators with electron devices has been rapidly increasing from the millimeter wave side.[8,9,10,11,12,13,14,15,16,17,18,19,20,21,22,23,24] Among the electron devices, resonant tunneling diodes (RTDs) have been considered as one of the candidates for compact THz oscillators at room temperature.[16,17,18,19,20,21,22,23] Oscillations up to 1.98 THz23 and relatively high output power in the sub-THz region[24] have been reported for these oscillators.
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