Abstract
The possibility of using Hall effect devices for measuring strong pulsed magnetic fields is studied. The Hall effect devices with a∼10-mV/T sensitivity, based on 1- to 3-μm-thick n-type InAs polycrystalline films with a 103-cm2/(Vs) electron mobility and ∼1018-cm-3 concentration, are used. It is established that the Hall effect voltage of these devices is a linear function of the field in magnetic fields with an induction of up to 56 T, and they are suitable for measuring unipolar strong pulsed magnetic fields at induction variation rates of up to ~105T/s. It is necessary to use more sensitive Hall effect devices to obtain higher signal-to-noise ratios for rapidly measuring alternating fields.
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